Flash memory with extended write / erase cycles.
Posted by F. S. KAMAL on January 2nd, 2009
The collaboration between Sun and Micron has resulted in the extension of the flash memory life allowing one million write / erase cycles, a figure higher than what is offered by other NAND technologies.
According to Micron, the improvement is based on a new single level cell (SLC) NAND technology which is faster than multi level cell (MLC) technology.
For more on this: The Register